摘要
HfO 2 -based ferroelectric field-effect transistors (FeFET) on Si were employed as the platform to investigate the impact of 60 Co <inline-formula> <tex-math notation="LaTeX"> γ </tex-math></inline-formula>-rays radiation on memory characteristics. For pristine state, the memory window by ±4 V sweeping for non-irradiated devices is 1.48 V which does not degrade with 300-krad and 10-Mrad radiation dose even though the remnant polarization (<inline-formula> <tex-math notation="LaTeX"> \text{P}{_(\textsf r)}{<}/tex-math></inline-formula>) decreases due to radiation-induced oxygen vacancies (Vo) and lattice distortion in the ferroelectric material HfZrO x (HZO). With the radiation dose level, the devices still hold the current ratio between "1" and "0" state of <inline-formula> <tex-math notation="LaTeX"> 2.2× 10^(\textsf 3)</tex-math></inline-formula> by extrapolating to 10 years at 25 °C, which is comparable to that of non-irradiated devices. The most adverse effect of radiation is the deteriorated endurance caused by the increased number of Vo during cycling test (+5.5 V, −5 V/<inline-formula> <tex-math notation="LaTeX"> 10 μ \text{s}{<}{/}tex-math></inline-formula>) as evidenced by memory window of 0.52 V at 10 6 cycles for devices with 300-krad radiation dose. Furthermore, robust HZO and SiO x interacial layer against radiation is required to suppress the bond break so that the reliability can be improved.