Abstract
IrSi Schottky-barrier detectors have been fabricated with [formula ommitet]40-[formula ommitet]A thick silicide electrodes formed on p-type Si substrates by in-situ processing in a conventional electron-beam evaporator. High-resolution transmission electron microscopy (TEM) shows that these detectors have clean, abrupt silicide-Si interfaces. For operation at a reverse-bias voltage of 2 V, the cutoff wavelength is [formula ommitet]10μm, as determined by quantum efficiency measurements. © 1988 IEEE