摘要
Two-dimensional (2D) MoS 2 has recently become of interest for applications in broad range photodetection due to their tunable bandgap. In order to develop 2D MoS 2 photodetectors with ultrafast response and high responsivity, up-scalable techniques for realizing controlled p-type doping in MoS 2 is necessary. In this paper, we demonstrate a p-type multilayer MoS 2 photodetector with selective-area doping using CHF 3 plasma treatment. Microscopic and spectroscopic characterization techniques, including atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), are used to investigate the morphological and electrical modification of the p-type doped MoS 2 surface after CHF 3 plasma treatment. Back-gated p-type MoS 2 field-effect transistors (FETs) are fabricated with an on/off current ratio in the order of 10 3 and a field-effect mobility of 65.2 cm 2 V -1 s -1 . They exhibit gate-modulated ultraviolet photodetection with a rapid response time of 37 ms. This study provides a promising approach for the development of mild plasma-doped MoS 2 as a 2D material in post-silicon electronic and optoelectronic device applications.