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Large scale and orientation-controllable nanotip structures on CuInS 2, Cu(In,Ga)S2, CuInSe2, and Cu(In,Ga)Se 2 by low energy ion beam bombardment process: Growth and characterization
Journal article   Peer reviewed

Large scale and orientation-controllable nanotip structures on CuInS 2, Cu(In,Ga)S2, CuInSe2, and Cu(In,Ga)Se 2 by low energy ion beam bombardment process: Growth and characterization

Yu-Ting Yen, Yi-Chung Wang, Yu-Ze Chen, Hung-Wei Tsai, Fan Hu, Shih-Ming Lin, Yi-Ju Chen, Chih-Chung Lai, Wenlong Liu, Tsang-Hsiu Wang, …
ACS Applied Materials and Interfaces, Vol.6(11), pp.8327-8336
11/06/2014

Abstract

chalcopyrite ion bombardment nano structure sputtering etching
One-step facile methodology to create nanotip arrays on chalcopyrite materials (such as CuInS <sub>2</sub> , Cu(In,Ga)S <sub>2</sub> , CuInSe <sub>2</sub> , and Cu(In,Ga)Se <sub>2</sub> ) via a low energy ion beam bombardment process has been demonstrated. The mechanism of formation for nanotip arrays has been proposed by sputtering yields of metals and reduction of metals induced by the ion beam bombardment process. The optical reflectance of these chalcopyrite nanotip arrays has been characterized by UV-vis spectrophotometer and the efficient light-trapping effect has been observed. Large scale (∼4′′) and high density (10 <sup>10</sup> tips/cm <sup>2</sup> ) of chalcopyrite nanotip arrays have been obtained by using low ion energy (< 1 kV), short processing duration (< 30 min), and template-free. Besides, orientation and length of these chalcopyrite nanotip arrays are controllable. Our results can be the guide for other nanostructured materials fabrication by ion sputtering and are available for industrial production as well. © 2014 American Chemical Society.

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