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Laser-induced crystallization in AgInSbTe phase-change optical disk
Journal article   Peer reviewed

Laser-induced crystallization in AgInSbTe phase-change optical disk

Yem-Yeu Chang and Lih-Hsin Chou
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol.44(5 A), pp.3042-3048
05/2005

Abstract

AgInSbTe Erasing mechanisms Laser-induced crystallization Microstructures of amorphous marks Nucleation Optical recording
Laser-induced crystallization in the initialization and erasing processes of a AgInSbTe phase-change optical recording disk was studied. After laser initialization, a AgInSbTe film formed a metastable face-centered cubic (f.c.c.) phase. Both the high-resolution transmission electron microscopy (HRTEM) cross-sectional image and the static test results showed the difficulty of nucleation. At low linear velocities, i.e., CD 1X and CD 2X, several clusters formed in amorphous marks due to the low cooling rate and the longer reheating of the subsequently applied pulses. These clusters enhanced nucleation and the amorphous marks probably crystallized via the nucleation and grain growth mechanism in the erasing process. The degree of order in the amorphous marks decreased with linear velocity, and no clusters existed in the amorphous marks at CD 4X. Due to the difficulty of nucleation, the erasing process was predominated by the direct grain growth mechanism at high linear velocities. ©2005 The Japan Society of Applied Physics.

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