摘要
The stress distributions and induced mobility gain in germanium (Ge)-based p-type MOSFETs (pMOSFETs) with an extended channel width are estimated in this paper. Several tin (Sn) concentrations of group-IV semiconductor GeSn alloys integrated with a compressive contact etching stop layer (CESL) are logically analyzed to evaluate the stress impact that results from the high lattice mismatch of embedded GeSn alloys on narrow device channels. Analytic results show that the stress intensity and corresponding mobility gain are enhanced by increasing the Sn concentration in the embedded source/drain GeSn stressors. By contrast, the performance variation of the short-channel Ge-based pMOSFET is strongly dominated by the extended width when the CESL covers the entire device. A mobility gain of up to 124.07% is achieved for the 22-nm pMOSFET when a 100-nm extended width is considered. Moreover, the entire stress responses of high-k/metal gate-last procedure combined with the following CESL deposition are investigated. Analytic results reveal that the stress relaxation along the channel height direction occurs after the poly gate etch process. Consequently, the adoption of a stressed CESL is demonstrated to be an effective approach to remedy the device mobility gain by stress improvement on the channel height direction.