Abstract
Ferroelectric (Pb1-x Bax) ZrO3 (PBZ) thin films with different PbBa ratio (PbBa=7525, 7030, 6535) were fabricated by a sol-gel process. Electrical properties of PBZ films on PtTi SiO2 Si substrates (metal/ferroelectric/metal structure) and on ZrO2 Si substrates metal/ferroelectric/insulator/semiconductor (MFIS) structure were investigated. The dielectric and ferroelectric properties depend greatly on the PbBa ratio of the PBZ films. For the MFIS structure, the PbBa=7030 film shows the best memory property with memory window of 0.9 V when it was scanned at ±5 V. Experimental results demonstrate that ferroelectric PBZ films with ZrO2 -buffered MFIS structure is suitable for non-volatile field effect transistor-type ferroelectric random access memory applications. © 2006 The Electrochemical Society.