Abstract
Lead barium zirconate (PBZ) thin films were deposited on PtTi SiO2 Si substrates by spincoating sol-gel precursor solutions to fabricate films for electrically tunable device applications. Randomly oriented (Pb1-x Bax) ZrO3 cubic perovskite films with x=0.4, 0.6, and 0.8 were formed after heat treating at 600 °C-750 °C. The results demonstrated that the (Pb0.6 Ba0.4) ZrO3 film possessed promising tunable dielectric properties as measured at 1 MHz. The (Pb0.6 Ba0.4) ZrO3 film heat treated at 750 °C has a dielectric dissipation factor (tan δ) of 0.007 and a dielectric tunability of 43%. The figure of merit of the (Pb0.6 Ba0.4) ZrO3 film is 61.43, which is comparable with the foremost investigated (BaSr) TiO3 films. © 2005 American Institute of Physics.