Abstract
Uniformly distributed dome-shaped β-Fe(Si x Ge 1-x ) 2 nanodots synthesized on Si 0.8 Ge 0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(Si x Ge 1-x ) 2 nanodots grown epitaxial on Si 0.8 Ge 0.2 substrate. © 2005 The Electrochemical Society. All rights reserved.