Abstract
Good quality Al 0.28 Ga 0.72 As 0.62 P 0.38 layers lattice matched to GaAs 0.61 P 0.39 epitaxial substrates were grown by liquid-phase epitaxy using a supercooling technique. By selection of the optimum growth condition, we can obtain the undoped layer with a low electron concentration of 1×10 16 cm -3 . The four major emission peaks observed from the temperature dependence of photoluminescence of the undoped AlGaAsP layer can be identified as the near-band-to-band, donor-to-valence-band, conduction-band-to-acceptor, and donor-to-acceptor-pair transitions. The binding energies of the residual donor and acceptor are 14 and 36 meV, respectively. Effects of Te doping on electrical and optical properties have been examined. The donor ionization energy of Te in the AlGaAsP layer is identified as 24.3 meV. Finally, a p-In 0.32 Ga 0.68 P /n-Al 0.28 Ga 0.72 As 0.62 P 0.38 single heterostructure diode was fabricated, which exhibits a forward-bias turn-on voltage of 1.6 V and an ideality factor of 2.24.