Abstract
High quality Ga 0.82 In 0.18 As 0.17 Sb 0.83 layers lattice matched to GaSb substrates were grown by liquid-phase epitaxy using a supercooling technique. By selection of the optimum growth condition, we can obtain the undoped layer with a low hole concentration of 1.2×10 16 cm -3 and a narrow full width at half maximum of 12 K photoluminescence spectrum of 11.6 meV. The temperature dependence of near band gap energy in Ga 0.82 In 0.18 As 0.17 Sb 0.83 layers, determined from the photoluminescence peak energy, varies as 0.62-[5.2×10 -4 T 2 /(T+163)] eV. In order to obtain the low electron concentration layer, the Te-doped polycrystalline GaSb (n=4×10 17 cm -3 ) is used to replace some of the undoped GaSb starting material in the growth solution for the purpose of compensation. The lowest hole concentration of 4-7×10 15 cm -3 can be achieved when the GaSb starting material in the growth solution consists of 10% Te-doped polycrystalline. With increasing percentage, the layer conduction changes to n type, and it reaches an electron concentration of 2×10 17 cm -3 by using only the Te-doped GaSb polycrystalline in the growth solution. On the other hand, the peak wavelength of 12 K photoluminescence spectrum decreases with increasing electron concentration because of the Burstein-Moss effect. Finally, an n-GaInAsSb/p-GaSb heterostructure diode was fabricated, which exhibits a forward-bias turn-on voltage of 1.8 V and an ideality factor of 1.86.