Abstract
Localized epitaxial TaSi 2 was grown on (111) and (001)Si by rapid thermal annealing in Ar ambient. The best epitaxy was obtained in samples annealed at 1300 °C for 300 s. Three major modes and one dominant mode of TaSi 2 epitaxy were found to grow on (111) and (001)Si, respectively. The roles of lattice match in the growth of epitaxial TaSi 2 are explored. The effects of gas ambient on the growth of TaSi 2 epitaxy are discussed.