Abstract
Epitaxial growth of both tetragonal and hexagonal WSi 2 in silicon was investigated by transmission electron microscopy. Eight different modes of WSi 2 epitaxy were found to grow in (001), (111), and (011) Si. Variants of WSi 2 epitaxy were also observed. Crystallographic analyses were performed to find possible matches between atoms in overlayer and silicon at WSi 2 /Si interfaces. Interfacial structures were analyzed. The roles of the lattice match in the growth of epitaxial WSi 2 and MoSi 2 , which are similar in various aspects, are explored. The effects of anharmonicity in the interatomic force of overlayer on the heteroepitaxial growth and pseudomorphism are discussed.