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Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors
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Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors

Yu-Lin Wang, B.H. Chu, C.Y. Chang, C.F. Lo, S.J. Pearton, A. Dabiran, P.P. ChowF. Ren
Sensors and Actuators, B: Chemical, 卷.146(1), 頁碼.349-352
04/2010

摘要

AlGaN/GaN HEMTs Biosensors Botulinum toxins Immuno sensor stability Long-term stability Sensor stability Electronic Optical and Magnetic Materials Instrumentation Condensed Matter Physics Surfaces Coatings and Films Metals and Alloys Electrical and Electronic Engineering Materials Chemistry
The long-term stability of antibody-functionalized, Au-gated AlGaN/GaN high electron mobility transistors for detecting botulinum toxin is reported in this study. The botulinum toxin sensor, which initially showed good data reproducibility and recyclability, was repeatedly tested over a 9-month period. The botulinum sensor was packaged and stored in phosphate buffered saline (PBS) at 4 °C in a refrigerator for long-term storage. The sensor was tested over time at room temperature and we found sensitivity losses of 2%, 12% and 28% after 3, 6 and 9 months, respectively. These results clearly demonstrate a significant step towards the realization of electronic detection of biomolecules by field-deployed sensor chips based on AlGaN/GaN HEMTs.

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