Abstract
The room-temperature photoluminescence (PL) and electroluminescence (EL) exceeding 1.3 μm are observed for InGaAs-capped GaSb quantum-ring (QR) structures. With increasing In composition, the emission wavelength would shift from 1.18 to 1.31 μm. The InGaAs-capped GaSb QRs also exhibit a higher injection current and stronger EL intensity at the same applied voltage. With the observation of low-temperature PL spectra, the transition mechanisms of the standard and InGaAs-capped QRs are further investigated. © 2012 Elsevier B.V. All rights reserved.