摘要
Incorporation of phase‐change materials (PCM) into nanophotonic structures is a straightforward method for making them tunable. The binary semiconducting chalcogenide antimony trisulfide (Sb2S3) is a suitable PCM for nanophotonic applications in the near‐infrared (NIR) owing to its high refractive index, low optical losses, and wide bandgap. Therefore, in this study, Sb2S3 Tamm plasmon polaritons (TPPs) are fabricated with a focus on their widespread use in nanophotonic applications. For this, a gold film and Sb2S3 are deposited on the distributed Bragg reflector through e‐beam evaporation. TPPs are excited at the interface between the distributed Bragg reflector (DBR) and the metal layer. The refractive index, extinction coefficient, and high‐Q reflectance spectra of the developed Sb2S3 are measured and analyzed. The Sb2S3 TPPs exhibit a resonance shift of 45 nm caused by the phase change of Sb2S3 from amorphous to crystalline. In addition, the angle‐dependent resonance shifts of 85, 76, and 63 nm are achieved by unpolarized, transverse magnetic (TM), and transverse electric (TE) modes near NIR light, respectively. The developed Sb2S3 TPP can be applied in various nanophotonics applications, including optical memory, optical data storage, and LiDAR receiver systems. The TPP resonance shift of 45 nm is caused by Sb2S3 from amorphous to crystalline. Also, the angle‐dependent resonance shifts of 85 nm, 76 nm, and 63 nm are achieved by unpolarized, TM mode, and TE mode NIR light, respectively.
