Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx with H2 Plasma Treatment

Dun-Bao Ruan; Kuei-Shu Chang-Liao; Shih-Han Yi; Hsin-I Yeh; Guan-Ting Liu

doi:10.1109/LED.2020.2971635

Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx with H2 Plasma Treatment

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Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx with H2 Plasma Treatment

Dun-Bao Ruan, Kuei-Shu Chang-Liao, Shih-Han Yi, Hsin-I Yeh 和 Guan-Ting Liu

IEEE Electron Device Letters, 卷.41(4), 頁碼.529-532

04/2020

DOI: https://doi.org/10.1109/LED.2020.2971635

摘要

GeOx

hydrogen plasma treatment

oxidation state

pGe MOS device

Electronic

Optical and Magnetic Materials

Electrical and Electronic Engineering

A low equivalent-oxide-thickness of 0.58 nm and a low gate leakage current density of &siml 2× 10-5 A/cm 2 at V G = V FB - 1 V in p-substrate Ge (pGe) MOS device can be simultaneously achieved by a hydrogen plasma (H ∗ ) treatment on GeO 2 interfacial layer (IL). It is found that the removal of GeO x with low oxidation state in GeO 2 IL play crucial roles on electrical characteristics of pGe MOS device. Through a H ∗ treatment, the electrical and reliability characteristics are improved by a GeO 2 IL with high oxidation state. Therefore, a GeO 2 IL with H ∗ treatment is promising for high performance pGe MOS devices.

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題名: Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx with H2 Plasma Treatment
翻譯題名: Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx with H2 Plasma Treatment
創作者：: Dun-Bao Ruan (作者) - Department of Engineering and System Science , National Tsing Hua University
Kuei-Shu Chang-Liao (作者) - Department of Engineering and System Science , National Tsing Hua University
Shih-Han Yi (作者) - National Tsing Hua University
Hsin-I Yeh (作者) - National Tsing Hua University
Guan-Ting Liu (作者) - Department of Engineering and System Science , National Tsing Hua University
學術資源類型: 期刊文章
出版日期: 04/2020
出版資訊: IEEE Electron Device Letters, 卷.41(4), 頁碼.529-532
語言: 英語

Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx with H2 Plasma Treatment

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