- Title
- Low Ge content ultra-thin fin width (5nm) monocrystalline SiGe n-type FinFET with low off state leakage and high I ON/I OFF ratio
- Creators - without role
- 永俊 吳
- Identifiers
- 9957776385506774
- Academic Unit
- Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
- Language
- English
- Resource Type
- Journal article
- Publication Details
- IEEE journal of the Electron Devices Society
Journal article
Low Ge content ultra-thin fin width (5nm) monocrystalline SiGe n-type FinFET with low off state leakage and high I ON/I OFF ratio
IEEE journal of the Electron Devices Society
2020
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