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Low Hg(II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors
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Low Hg(II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors

K.H. Chen, H.W. Wang, B.S. Kang, C.Y. Chang, Y.L. Wang, T.P. Lele, F. Ren, S.J. Pearton, A. Dabiran, A. Osinsky, …
Sensors and Actuators, B: Chemical, 卷.134(2), 頁碼.386-389
09/2008
DOI: https://doi.org/10.1016/j.snb.2008.05.012

摘要

HEMT Hg2+ Mercury ion sensor Thioglycolic acid Electronic Optical and Magnetic Materials Instrumentation Condensed Matter Physics Surfaces Coatings and Films Metals and Alloys Electrical and Electronic Engineering Materials Chemistry
Thioglycolic acid functionalized Au-gated AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect mercury(II) ions. The drain current of the HEMT sensors monotonically increased with the mercury(II) ion concentration from 1.5 × 10 -8 to 4 × 10 -8 M. The drain current reached equilibrium around 15-20 s after the concentrated Hg ion solution added to the gate area of the HEMT sensors. The effectiveness of the thioglycolic acid functionalization was evaluated with a surface contact angle study. The results suggest that portable, fast response, and wireless-based heavy metal ion detectors can be realized with AlGaN/GaN HEMT-based sensors. © 2008 Elsevier B.V. All rights reserved.

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