摘要
Electronics based on layered indium selenide (InSe) channels exhibit promising carrier mobility and switching characteristics. Here, an InSe tribotronic transistor (denoted as w/In InSe T-FET) obtained through the vertical combination of an In-doped InSe transistor and triboelectric nanogenerator is demonstrated. The w/In InSe T-FET can be operated by adjusting the distance between two triboelectrification layers, which generates a negative electrostatic potential that serves as a gate voltage to tune the charge carrier transport behavior of the InSe channel. Benefiting from the surface charging doping of the In layer, the w/In InSe T-FET exhibits high reliability and sensitivity with a large on/off current modulation of 10 under a low drain–source voltage of 0.1 V and external frictional force. To demonstrate its function as a power-saving tactile sensor, the w/In InSe T-FET is used to sense “INSE” in Morse code and power on a light-emitting diode. This work reveals the promise of 2D material–based tribotronics for use in nanosensors with low power consumption as well as in intelligent systems.