摘要
The fabricated GaSb mesa avalanche photodiodes exhibit good characteristics of low dark currents, low junction capacitances, and high breakdown voltages. The GaSb layers in these diodes, which have a low electron concentration of 4.3 X 10 15 cm -3 , were grown by liquid-phase epitaxy from Sb-rich solutions and by compensation using poly crystalline Te-doped GaSb in the growth solutions. © 1995 The Japan Society of Applied Physics.