Abstract
Monolithic 12 element 1.3μm AlGaInAs/InP strained multi-quantum well laser arrays have been fabricated. The laser diodes on the array exhibit excellent uniformity with standard deviations of 0.08mA, 0.011W/A and 0.6nm for threshold current, slope efficiency and lasing wavelength, respectively, at 20°C. In addition, a low crosstalk of -2.2dB is achieved as other elements are simultaneously biased at 70mA. A lifetime of > 30 years is estimated for the lasers operating at 10mW and 85°C.