Abstract
Several oxide-GaAs heterostructures were fabricated using in situ multiple-chamber molecular beam epitaxy. The oxides include SiO 2 , MgO, and Ga 2 O 3 (Gd 2 O 3 ), all evaporated by an electron beam method. The SiO 2 and Ga 2 O 3 (Gd 2 O 3 ) films are amorphous while the MgO films are crystalline and part of the films are epitaxially grown on GaAs(100). Among these heterostructures, the Ga 2 O 3 (Gd 2 O 3 )-GaAs shows a photoluminescence intensity comparable to that of Al 0.45 Ga 0.55 As-GaAs, and forms accumulation and inversion layers as measured from capacitance voltage measurement in quasistatic and high frequency modes. © 1996 American Vacuum Society.