摘要
An overview is given on 193 nm lithography at a k 1 factor of 0.37-0.40 as well as some topics important to 100 nm logic such as OPC, control of CD variation, and lowering of MEF. In OPC, best correction results can be achieved by developing accurate models and using reasonable segmentation results. The technique of variable-dose exposures is demonstrated as a means to reduce interfield CD variation once the cause is known and can be characterized. The concept of 2D MEF is introduced to describe situations at feature ends.