Abstract
Effects of nitrogen-ion implantation on TiSi 2 contacts on shallow junctions have been investigated. Nitrogen-ion implantation was found to suppress the boron and arsenic diffusion. For Ti on 30 keV BF 2 + -20 keV N 2 + and 30 keV As + -20 keV N 2 + implanted samples, a continuous low-resistivity TiSi 2 layer was found to form in all samples annealed at 700-900 °C. For Ti on 1 × 10 15 cm -2 N 2 + and As + implanted samples, end-of-range defects were completely eliminated in all samples annealed at 700-900 °C. The results indicated that, with appropriate control, N + implantation can be successfully implemented in forming low-resistivity TiSi 2 contacts on shallow junctions in deep submicron devices.