摘要
In this study, we investigated the electrical properties and microstructures of FeCoNi, Ti 0.5 FeCoNi, and TiFeCoNi thin films, with the aim of identifying new oxygen-deficient oxides with low resistivity. The resistivity values of as-deposited FeCoNi, Ti 0.5 FeCoNi, and TiFeCoNi films were 1089, 2883, and 5708 μΩ-cm, respectively. After vacuum annealing at 1000°C for 30 min, the resistivity values plummeted to 20.4, 32.1, and 45.4 μΩ-cm, respectively. Transmission electron microscope (TEM) analysis revealed that all of the as-annealed films were in the form of an oxygen-deficient oxide/metal composite with layered structure. The resistivity of these oxides is lower than that of indium tin oxide (ITO). They represent a new category of low-resistivity oxides.