Abstract
This letter presents Sn-doped Cu nanowires, Cu(Sn) NWs, synthesized by chemical vapor deposition using Cu and SnCl 2 powders as precursors at low temperature (≤400° C}) and their electrical properties. The Sn not only plays a role as a catalyst to enhance reduction of Cu, but also as a dopant for Cu(Sn) NWs. The Sn thickness, substrate pretreatment, substrate temperature, process pressure, and precursor compositions are optimized to obtain high-density nanowires. Results show that Cu(Sn) NWs, 30 μ m in length and 50-620 nm in diameter, are synthesized successfully at 350° C. The Cu(Sn) NWs exhibit low resistivity (2.84 μΩ-cm), which is the lowest value reported thus far, and a failure current density of 3.16× 10 7 Acm 2 . © 1980-2012 IEEE.