Abstract
Low-temperature (490°C)GaAs epitaxial growth on (100) silicon by molecular beam epitaxy is reported in this letter. Silicon wafers were cleaned by spin-etch technique to passivate silicon surface with hydrogen, by which the conventional high-temperature (≳850°C) oxide desorption step for pre-epitaxial substrate preparation is eliminated. The possibility of epitaxial growth on such a passivated surface to obtain good quality epitaxy is investigated. Epitaxial films are characterized by cross-sectional transmission electron microscopy (XTEM), plan-view transmission electron microscopy, and double crystal diffraction (DCD).