摘要
This study presents a method for achieving stable morphotropic phase boundary characteristics in superlattice HfO2/ZrO2 (SL-HZO)-based metal-ferroelectric-metal (MFM) capacitors using low-temperature microwave annealing (MWA) technology. Compared to conventional rapid thermal annealing, MWA-treated SL-HZO-based MFM capacitors exhibit excellent dielectric properties (kappa = 51) at reduced processing temperatures. These devices also demonstrate improved reliability, including lower leakage current, higher breakdown strength, and an operational lifetime exceeding 10 years at voltages up to 2.54 V. This approach mitigates thermal budget limitations in back-end-of-line processes while enhancing device performance, offering a promising solution for advanced integrated circuit applications.