Low temperature nitridation of silicon by direct ammonia nitridation in a molecular beam epitaxy reactor

T. K. Higman; R. T. Fayfield; M. S. Hagedorn; K. H. Lee; S. A. Campbell; J. N. Baillargeon; K. Y. Cheng

doi:10.1116/1.586908

Low temperature nitridation of silicon by direct ammonia nitridation in a molecular beam epitaxy reactor

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Low temperature nitridation of silicon by direct ammonia nitridation in a molecular beam epitaxy reactor

T. K. Higman, R. T. Fayfield, M. S. Hagedorn, K. H. Lee, S. A. Campbell, J. N. Baillargeon 和 K. Y. Cheng

AIP Publishing Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 卷.11(3), 頁.992

1993

DOI: https://doi.org/10.1116/1.586908

摘要

Nitridation;Silicon;Epitaxy;Chemical vapor deposition;Thin films

The direct thermal nitridation of silicon by ammonia in a molecular‐beam epitaxial reactor is being reported. These films, which are subsequently thickened by low‐pressure chemical vapor deposition, exhibit extremely low surface state densities (∼1010/eV/cm2), which we attribute to extremely low interfacial oxygen contamination.

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題名: Low temperature nitridation of silicon by direct ammonia nitridation in a molecular beam epitaxy reactor
創作者：: T. K. Higman (作者) - University of Minnesota
R. T. Fayfield (作者) - University of Minnesota
M. S. Hagedorn (作者) - University of Minnesota
K. H. Lee (作者) - University of Minnesota
S. A. Campbell (作者) - University of Minnesota
J. N. Baillargeon (作者) - University of Illinois Urbana-Champaign
K. Y. Cheng (作者) - University of Illinois Urbana-Champaign
學術資源類型: 期刊文章
出版日期: 1993
出版資訊: AIP Publishing Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 卷.11(3), 頁.992
語言: 中文

Low temperature nitridation of silicon by direct ammonia nitridation in a molecular beam epitaxy reactor

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