Abstract
Low threshold current and high temperature operation is achieved in a 1.55μm graded-index separate-confinement heterostructure and strained multi-quantum well AlInAs/AlGaInAs laser diode which was fabricated from epitaxial wafers grown by low-pressure organometallic vapour phase epitaxy. Remarkable improvements in threshold current, operating temperature and characteristic temperature have been demonstrated. The threshold current is 7mA at 20°C, the emission wavelength is 1.5542μm and the characteristic temperature between 20 and 70°C is 84K.