Abstract
Good quality In 0.12 Ga 0.88 As 0.34 P 0.66 layers lattice matched to GaAs 0.61 P 0.39 epitaxial substrates were grown by liquid-phase epitaxy. The electrical and optical properties of the un-, Te-, and Zn-doped In 0.12 Ga 0.88 As 0.34 P 0.66 layers are described in detail. By selection of the optimum growth condition, we can obtain the undoped layer with an electron concentration of 2×10 16 cm -3 . Room-temperature carrier concentrations ranging from 1.8×10 17 to 3.4×10 18 cm -3 for n-type and from 1.6×10 17 to 2.8×10 18 cm -3 for p-type dopants are obtained. The relative intensity of 300 K photoluminescence (PL) spectra presents the maximum values at 6×10 17 and 1×10 18 cm -3 for electron and hole concentrations, respectively. The acceptor ionization energy for Zn also is described from the 50 K PL spectra. The five major emission peaks observed from the temperature dependence of PL spectra for the Zn-doped InGaAsP layer are identified clearly. Finally, the p-n homostructure orange LEDs were fabricated to exhibit the emission peak wavelength and the full width at half maximum of electroluminescence of ca. 619 nm and 53 meV, respectively.