Abstract
High quality Al 0.28 Ga 0.72 As 0.62 P 0.38 layers were grown on GaAso.6iPo.39 epitaxial sub-strates by liquid-phase epitaxy using a supercooling technique. The electrical properties of the AlGaAsP layers were determined by capacitance-voltage measurements at 300K. The undoped layers always give n-type conduction with a background concentration of 1 × 10 16 cm -3 . The 9-K photoluminescence spectra show three distinctive peaks and their relative intensities change with the excitation power density. The temperature dependence of photoluminescence from the undoped AlGaAsP layers shows that there is a new peak emerging above 30K. The four major emission peaks have been identified, involving intrinsic recombination, donor-to-valence-band transitions, conduction-band-to-acceptor transitions, and donor-acceptor pair transitions. The binding energies of the residual donors and acceptors are 13.7 and 36 meV, respectively, nevertheless these impurites are not completely identified. © 1992 TMS.