Abstract
The photoluminescence spectra of N-implanted In 0.32 Ga 0.68 P epitaxial layers grown on GaAs 0.61 P 0.39 substrates by liquid-phase epitaxy have been investigated at different annealing temperatures and times by the rapid thermal annealing technique. The nitrogen level is located ∼110 meV below the Γ-band minimum for the In 0.32 Ga 0.68 P crystal. The activation energy necessary to place N atoms into sites to form the N-isoelectronic trap is 0.47 and 0.48 eV in Ar and N 2 ambients, respectively. The optimum post-implantation annealing condition to obtain the maximum isoelectronic trap emission intensity is at 800°C for 30-s duration in both Ar and N 2 ambients. © 1992 The Japan Society of Applied Physics.