Abstract
The luminescence of GaAs layers grown by molecular beam epitaxy at low substrate temperature (230°C) in a GaAs/In 0.2 Ga 0.8 As multiple quantum well structure is presented. The near-band-gap emission and defect-related emission are observed for samples annealed at high temperature (800-900°C), but are not observed for samples annealed at lower temperature (600-700°C). The luminescence shows a strong correlation with the spacing between As precipitates based on the transmission electron microscope observations. The evolution of luminescence of annealed low-temperature (LT) GaAs can be reasonably explained by the buried Schottky model.© 1995 American Institute of Physics.