Abstract
Perovskite-based ZrTiO <sub>x</sub> /BaZr <sub>y</sub> Ti1-yO <sub>3</sub> (BZTO) (y=0.6) with partial crystallization has been found to possess a rather high-κ value of 48.6 and positive quadratic voltage coefficient of capacitance (VCC). Through stacking BZTO and ZrTiO <sub>x</sub> as laminate dielectric, metal-insulator-metal capacitors using VCC canceling effect advance frontiers by exhibiting a record-low VCC of 14 ppmV <sup>2</sup> at the capacitance of 13.4 fF/μm <sup>2</sup> , low dielectric loss tangent <0.01, and low leakage current of 7.5 imes 10-9~A/cm <sup>2</sup> at-1~V. With constant voltage stress at 2.5 V for 1000 s, degradation in leakage current <30\\\\\\\\\\\\\\\\% is observed. In addition, excellent reliability of 0.89% capacitance change against stress up to a projected of 10 years is also achieved. The aforementioned characteristics not only compare favorably to other high-κ-based dielectrics, most importantly, but also these results meet ITRS requirements set by 2024. © 1980-2012 IEEE.