Abstract
Multi-quantum wells (MQWs) InGaN/GaN LEDs, 300μm × 300μm chip size, were fabricated with Ta 2 O 5 / SíO 2 dielectric multi-layer micro-mirror array (MMA) embedded in the epitaxiallateral-overgrowth (ELOG) gallium nitride (GaN) on the c-plane sapphire substrate. MQWs InGaN/GaN LEDs with ELOG embedded patterned SiO 2 array (P-SiO 2 ) of the same dimension as the MMA were also fabricated for comparison. Dislocation density was reduced for the ELOG samples. 75.2% light extraction enhancement for P-SiO 2 -LED and 102.6% light extraction enhancement for MMA-LED were obtained over the standard LED. We showed that multiple-diffraction with high intensity from the MMA redirected the trap lights to escape from the LED causing the light extraction enhancement. © 2010 Optical Society of America.