Abstract
Mg-doped In 0.32 Ga 0.68 P epitaxial layers have been grown on (100) GaAs 0.61 P 0.39 substrates by liquid-phase epitaxy using a supercooling method. The electrical properties of the Mg-doped layers are investigated using capacitance-voltage methods at 300 K. The full width at half maximum value of the 300-K photoluminescence spectrum increases with hole concentration for Mg-doped layers. The 77-K photoluminescence spectra show two peaks and one broad band, and their relative intensities change with various hole concentrations. The Mg acceptor ionization energy obtained from 77-K photoluminescence spectra is in the range from 20 to 38 meV. Finally, the photoluminescence spectra of Mg-doped In 0.32 Ga 0.68 P layers with three hole concentrations measured at various temperatures between 20 and 150 K are presented for the gradual evolution of the peaks.