摘要
MoS 2 atomic layers have recently attracted much interest because of their two-dimensional structure as well as tunable optical, electrical, and mechanical properties for next-generation electronic and electro-optical devices. Here we have achieved facile fabrication of MoS 2 thin films on CdS nanowires by cation exchange in solution at room temperature and importantly observed their extraordinary magnetic properties. We establish the atomic structure of the MoS 2 /CdS heterostructure by taking atomic images of the MoS 2 /CdS interface as well as performing first-principles density functional geometry optimizations and scanning transmission electron microscopy annular dark field image simulations. Furthermore, our first-principles density functional calculations for the MoS 2 /CdS heterostructure reveal that the magnetism in the MoS 2 /CdS heterostructure stems from the ferromagnetic MoS 2 monolayer next to the MoS 2 /CdS interface. The ferromagnetism is attributed to the partial occupation of the Mo dx 2 -y 2 /d xy conduction band in the interfacial MoS 2 monolayer caused by the mixed covalent-ionic bonding among the MoS 2 and CdS monolayers near the MoS 2 /CdS interface. These findings of the ferromagnetic MoS 2 monolayer with large spin polarization at the MoS 2 /semiconductor interface suggest a new route for fabrication of the transition metal dichalcogenide-based magnetic semiconductor multilayers for applications in spintronic devices.