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Mask error tensor and causality of mask error enhancement for low-k 1, imaging: Theory and experiments
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Mask error tensor and causality of mask error enhancement for low-k 1, imaging: Theory and experiments

Chun-Kuang Chen, Tsai-Sheng Gau, Jaw-Jung Shin, Ru-Gun Liu, Shinn-Sheng Yu, Anthony YenBurn J. Lin
Journal of Microlithography, Microfabrication and Microsystems, 卷.3(2), 頁碼.269-275
04/2004

摘要

Depth of focus Line end Mask Mask error enhancement factor MEF Optical lithography Atomic and Molecular Physics and Optics Electrical and Electronic Engineering
Three important concepts about the mask error enhancement factor (MEEF) are proposed. From the definition of MEEF, it could be derived as a function of the image log slope and the aerial image variation caused by mask critical dimension (CD) errors. Second, a mask error common window indicator (MECWIN) is proposed to evaluate the MEEF and mask CD specification by knowing the wafer CD tolerance. This concept is used to define the mask CD specification without any ambiguity. Finally, we describe the complex 2-D response to the mask-making error around the line end by a mask error enhancement tensor. Both theoretical derivations and experiments to justify the theory are presented. © 2004 Society of Photo-Optical Instrumentation Engineers.

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