Abstract
We have studied the valence band of Ga 0.47 In 0.53 As by ultraviolet photoemission using photon energies of 11.7, 16.8, and 21.2 eV. The photo-electron energy spectra show that the valence band of Ga 0.47 In 0.53 As has well-defined structure similar to that of binary III-V semiconductors. We have used these spectra to determine a conduction band Γ-L separation of 0.55 eV at 300 K.