Abstract
Ni-doped TaSi 2 nanowires were synthesized by annealing NiSi 2 film as the mediated layer in a Ta reductive ambient at 950°C for 16 h. The hysteresis loop has a hard magnetization axis and high remanence with a coercive force of 120 Oe when the applied magnetic field is perpendicular to the substrate (parallel to the nanowires) and the hysteresis loop has an easy magnetization axis and low remanence with a coercive force of about 95 Oe when the applied magnetic field is parallel to the substrate (perpendicular to the nanowires). The elastic modulus of the nanowires was measured to be 170-485 GPa. © IOP Publishing Ltd.