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Memristor logic operation gate with share contact RRAM cell
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Memristor logic operation gate with share contact RRAM cell

Wen Chao Shen, Yuan Heng Tseng, Y.-D. Chih 和 Chrong Jung Lin
IEEE Electron Device Letters, 卷.32(12), 頁碼.1650-1652
12/2011
DOI: https://doi.org/10.1109/LED.2011.2167313

摘要

Contact resistive random access memory (CRRAM) Latch Logic gate Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
In this letter, we proposed a novel operation of a share contact resistive random access memory (CRRAM) structure to realize a nonvolatile latch (NV latch) with a single transistor. With a share CRRAM structure and sequential input operations, the NV latch as well as and/or functions have been successfully demonstrated. The new mixing approach of combining memory and logic in a single unit projects the possibility of new applications for VLSI circuits. © 2006 IEEE.

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