Metal–Semiconductor Phase-Transition in WSe2(1-        x        )Te2        x Monolayer

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Peng Yu, Junhao Lin, Linfeng Sun, Quang Luan Le, Xuechao Yu, Guanhui Gao, Chuang-Han Hsu, Di Wu, Tay-Rong Chang, Qingsheng Zeng, …

Advanced Materials, 卷.29(4), 1603991

01/2017

摘要

2D materials

band gap

field-effect transistor

metal

semiconductors

Materials Science (all)

Mechanics of Materials

Mechanical Engineering

url

https://doi.org/10.1002/adma.201603991檢視

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題名: Metal–Semiconductor Phase-Transition in WSe2(1- x )Te2 x Monolayer
創作者：: Peng Yu (作者) - Nanyang Technological University
Junhao Lin (作者) - National Institute of Advanced Industrial Science and Technology
Linfeng Sun (作者) - Nanyang Technological University
Quang Luan Le (作者) - Nanyang Technological University
Xuechao Yu (作者) - Nanyang Technological University
Guanhui Gao (作者) - Forschungsverbund Berlin
Chuang-Han Hsu (作者) - Department of Physics , National University of Singapore
Di Wu (作者) - National University of Singapore
Tay-Rong Chang (作者) - Department of Physics , National Tsing Hua University
Qingsheng Zeng (作者) - Nanyang Technological University
Fucai Liu (作者) - Nanyang Technological University
Qi Jie Wang (作者) - Nanyang Technological University
Horng-Tay Jeng (作者) - Department of Physics , National Tsing Hua University
Hsin Lin (作者) - National University of Singapore
Achim Trampert (作者) - Forschungsverbund Berlin
Zexiang Shen (作者) - Nanyang Technological University
Kazu Suenaga (作者) - National Institute of Advanced Industrial Science and Technology
Zheng Liu (作者) - Nanyang Technological University
學術資源類型: 期刊文章
出版日期: 01/2017
出版資訊: Advanced Materials, 卷.29(4), 1603991
語言: 英語