Logo image
Metalorganic chemical vapor deposition of lead-free ferroelectric BiFeO 3 films for memory applications
期刊文章   同儕審查

Metalorganic chemical vapor deposition of lead-free ferroelectric BiFeO 3 films for memory applications

S.Y. Yang, F. Zavaliche, L. Mohaddes-Ardabili, V. Vaithyanathan, D.G. Schlom, Y.J. Lee, Y.H. Chu, M.P. Cruz, Q. Zhan, T. Zhao, …
Applied Physics Letters, 卷.87(10), 102903
09/2005

摘要

Physics and Astronomy (miscellaneous)
We have grown BiFeO3 thin films on SrRuO3 SrTiO3 and SrRuO3 SrTiO3 Si using liquid delivery metalorganic chemical vapor deposition. Epitaxial BiFeO3 films were successfully prepared through the systematic control of the chemical reaction and deposition process. We found that the film composition and phase equilibrium are sensitive to the Bi:Fe ratio in the precursor. Fe-rich mixtures show the existence of α- Fe2 O3, while Bi-rich mixtures show the presence of Β- Bi2 O3 as a second phase at the surface. In the optimized films, we were able to obtain an epitaxial single perovskite phase thin film. Electrical measurements using both quasistatic hysteresis and pulsed polarization measurements confirm the existence of ferroelectricity with a switched polarization of 110-120 μC cm2, ΔP (= P* - P ). Out-of plane piezoelectric (d33) measurements using an atomic force microscope yield a value of 50-60 pmV. © 2005 American Institute of Physics.

相關連結

指標

1 檢視次數

詳細資料

Logo image