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Metamaterials from Plasma-Treated Block Copolymer Monolith
期刊文章

Metamaterials from Plasma-Treated Block Copolymer Monolith

C. Chen, J.-C. Chuang, K.-H. Yin, C.-H. Tung, K.-C. Yang, Y.-C. Hung, C.-C. Lee 和 R.-M. Ho
ACS Applied Materials and Interfaces, 卷.18(13), 頁碼.19434-19446
2026
Web of Science ID: WOS:001722356700001

摘要

block copolymer energy dissipation high transmittance mechanical metamaterials optical metamaterials Indium compounds ITO glass Metamaterials Nanotechnology Opacity Plasma applications Semiconducting indium Semiconductor devices Silicones Thin films Tin oxides copolymer dimeticone glass indium tin oxide oxygen polystyrene silicon dioxide American Chemical Society Block co polymers Energy Facile method High transmittance matrix Mechanical Mechanical metamaterial Nano-networks Optical metamaterials article controlled study pharmaceutics plasma proof of concept refraction index refractometry semiconductor Energy dissipation
This work demonstrates a facile method for fabricating thin-film metamaterials with high transmittance and superior impact resistance directly from plasma-treated polystyrene-block-polydimethylsiloxane (PS-b-PDMS) monoliths. Upon oxygen plasma treatment, the cocontinuous PDMS within the PS matrix is oxidized to SiO2, whereas the PS matrix simultaneously decomposes, yielding a nanoporous SiO2 thin film with a well-ordered network texture. The resulting monolith exhibits an ultralow refractive index and excellent optical transmittance, thereby functioning effectively as an optical metamaterial. Concurrently, its deliberate nanonetwork architecture affords exceptional impact resistance, highlighting its characteristics as a mechanical metamaterial. As a proof of concept, the SiO2 nanonetwork is applied as a protective overlayer for indium tin oxide (ITO) conductive lines, demonstrating its potential as a ductile glass coating for fragile conductive components in semiconductor devices. © 2026 The Authors. Published by American Chemical Society

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https://www.scopus.com/inward/record.uri?eid=2-s2.0-105035368930&doi=10.1021%2facsami.5c25786&partnerID=40&md5=8bf4b467b789afa677ea759d0e5ca4ad檢視
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https://doi.org/10.1021/acsami.5c25786檢視
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