摘要
<p>The optical properties of a SiO<sub>x</sub> film rapid-thermal-annealed (RTA) by CO<sub>2</sub> laser are primarily investigated. The microphotoluminescence (<span style="font-size:12pt"><span style="font-family:Calibri,sans-serif"><span style="color:black"><span style="font-family:"新細明體","serif"">μ</span></span></span></span>-PL) and high-resolution transmission electron microscopy (HRTEM) analyses indicate that the precipitation of random-oriented Si nanocrystals can be initiated when laser intensity (P<sub>laser</sub> ) is larger than 4.5 kW/cm<sup>2</sup> . At P<sub>laser</sub> of 6kW/cm<sup>2</sup> , the Si nanocrystal exhibits a largest diameter of 8 nm and a highest density of 4.5x10<sup>16</sup> cm<sup>-3</sup> , which emits strong PL at 790-825 nm. The microphotoreflectance of the CO<sub>2</sub> laser RTA SiO<sub>x</sub> film reveals a volume density product dependent refractive index increasing from 1.57 to 1.87 as P<sub>laser</sub> increases from 1.5 to 7.5 kW/cm<sup>2</sup> . Nonetheless, the laser ablation of the SiO<sub>x</sub> film occurs with a linear ablation slope of 35 nm/kW/cm<sup>2</sup> at beyond 7.5 kW/cm<sup>2</sup> , which terminates the enlargement of Si nanocrystals, degrades the near-infrared PL, and slightly reduces the refractive index of the CO<sub>2</sub> laser RTA SiO<sub>x</sub> film.</p>