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Microphotoluminescence and Microphotoreflectance Analyses of CO2 Laser Rapid-Thermal-Annealed SiOx Surface With Buried Si Nanocrystals
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Microphotoluminescence and Microphotoreflectance Analyses of CO2 Laser Rapid-Thermal-Annealed SiOx Surface With Buried Si Nanocrystals

G.-R. Lin, C.-J. Lin, L.-J. ChouY.-L. Chueh
IEEE Transactions on Nanotechnology, 卷.5(5), 頁碼.511-516
11/09/2006

摘要

CO2 laser annealing;microphotoluminescence;nanotechnology;Si nanocrystal;SiOx
<p>The optical properties of a SiO<sub>x</sub>&nbsp;film rapid-thermal-annealed (RTA) by CO<sub>2</sub>&nbsp;laser are primarily investigated. The microphotoluminescence (<span style="font-size:12pt"><span style="font-family:Calibri,sans-serif"><span style="color:black"><span style="font-family:&quot;新細明體&quot;,&quot;serif&quot;">&mu;</span></span></span></span>-PL) and high-resolution transmission electron microscopy (HRTEM) analyses indicate that the precipitation of random-oriented Si nanocrystals can be initiated when laser intensity (P<sub>laser</sub>&nbsp;) is larger than 4.5 kW/cm<sup>2</sup>&nbsp;. At P<sub>laser</sub>&nbsp;of 6kW/cm<sup>2</sup>&nbsp;, the Si nanocrystal exhibits a largest diameter of 8 nm and a highest density of 4.5x10<sup>16</sup>&nbsp;cm<sup>-3</sup>&nbsp;, which emits strong PL at 790-825 nm. The microphotoreflectance of the CO<sub>2</sub>&nbsp;laser RTA SiO<sub>x</sub>&nbsp;film reveals a volume density product dependent refractive index increasing from 1.57 to 1.87 as P<sub>laser</sub>&nbsp;increases from 1.5 to 7.5 kW/cm<sup>2</sup>&nbsp;. Nonetheless, the laser ablation of the SiO<sub>x</sub>&nbsp;film occurs with a linear ablation slope of 35 nm/kW/cm<sup>2</sup>&nbsp;at beyond 7.5 kW/cm<sup>2</sup>&nbsp;, which terminates the enlargement of Si nanocrystals, degrades the near-infrared PL, and slightly reduces the refractive index of the CO<sub>2</sub>&nbsp;laser RTA SiO<sub>x</sub>&nbsp;film.</p>

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