Microscopic Schottky-barrier control: Semiconductor-on-metal case

Y. Hwu; M. Marsi; P. Alméras; G. Margaritondo

doi:10.1103/PhysRevB.46.1835

Microscopic Schottky-barrier control: Semiconductor-on-metal case

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Microscopic Schottky-barrier control: Semiconductor-on-metal case

Y. Hwu, M. Marsi, P. Alméras 和 G. Margaritondo

Physical Review B, 卷.46(3), 頁碼.1835-1837

1992

DOI: https://doi.org/10.1103/PhysRevB.46.1835

摘要

Condensed Matter Physics

We have modified the Schottky-barrer height of Si overlayers on Ag(111) substrates by means of Cs intralayers of different thicknesses. We also found a correlation between these changes and those of the work function, which makes it possible to measure the true value of the S parameter. © 1992 The American Physical Society.

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題名: Microscopic Schottky-barrier control: Semiconductor-on-metal case
翻譯題名: Microscopic Schottky-barrier control: Semiconductor-on-metal case
創作者：: Y. Hwu (作者) - University of Wisconsin–Madison
M. Marsi (作者) - University of Wisconsin–Madison
P. Alméras (作者) - École Polytechnique Fédérale de Lausanne
G. Margaritondo (作者) - École Polytechnique Fédérale de Lausanne
學術資源類型: 期刊文章
出版日期: 1992
出版資訊: Physical Review B, 卷.46(3), 頁碼.1835-1837
語言: 英語

Microscopic Schottky-barrier control: Semiconductor-on-metal case

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