Abstract
The microstructures of low-temperature polycrystalline silicon grown both on SiO 2 and Corning 7059 glass substrate are presented. The silicon was deposited by the hydrogen dilution method using electron-cyclotron-resonance chemical-vapor deposition at 250 °C without any thermal annealing. The hydrogen dilution ratios were varied from 90% to 99%. Transmission electron microscopy images, Raman shift spectra, and x-ray-diffraction (XRD) patterns of the films were obtained. The maximum grain size was about 1 μm and the crystalline fraction which was characterized from Raman shift spectra was near 100%. From the XRD patterns 〈111〉- and 〈110〉-oriented crystalline silicon grains were clearly present in the polycrystalline silicon films. © 1995 American Institute of Physics.