Microwave Effects on Metal-Semiconductor Contact of Heavily Nitrogen-Implanted Silicon

期刊文章

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IEEE Transactions on Electron Devices, 卷.71(2), 頁碼.991-996

2024

摘要

Annealing;dopant activation;microwave annealing (MWA);nitrogen-implanted (N-implanted) silicon;rapid thermal annealing (RTA)

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題名: Microwave Effects on Metal-Semiconductor Contact of Heavily Nitrogen-Implanted Silicon
創作者：: 存續張 (作者)
學術資源類型: 期刊文章
出版日期: 2024
出版資訊: IEEE Transactions on Electron Devices, 卷.71(2), 頁碼.991-996
語言: 英語